* *
* * *
* * *
*
* Home > Capabilities > Electronics > MEMS > MEMS Facilities *
*
* * *
*

MEMS Facilities

Processes
Processing is conducted in a dedicated class 100/1000 silicon device processing facility with a class 10/100 lithography clean room. We are able to tailor our facility to accommodate a wide variety of customer requirements, including active devices. We are capable of operating between 100mm and 150mm diameter wafers and can process non-standard wafer parts.

QinetiQ holds accreditation to ISO 9001 across all of its activities.

MEMS processes include:-

Sacrificial surface micromachining in 2 and 3 levels of polysilicon, or in low temperature, complementary metal oxide semiconductor (CMOS) compatible plasma enhanced chemical vapour deposition (PECVD) low stress nitride/metal layer combinations.

High aspect ratio micromachining (HARM) utilising state-of-the-art deep dry etching of bulk silicon and thick silicon on insulator (SOI) substrates.

Bulk micromachining based on the anisotropic etching of silicon with TMAH and XeF2 for complementary metal oxide semiconductor (CMOS) compatibility.

Chemical vapour deposition of CMOS compatible metals and of electronic and magnetic thin films.
*
Deep reactive ion etching Deep reactive ion etching
*

Our Production-type equipment base


  • Standard 2 micron Complementary Metal Oxide Semiconductor (CMOS) tool set
  • 2 STS deep dry etchers + XeF2 etch module
  • Plasma Enhanced Chemical Vapour Deposition (PECVD) silicon, oxide & nitride deposition
  • Double-sided mask alignment
  • E-beam direct write lithography
  • Advanced metals and oxides Chemical Vapour Deposition (CVD)
  • Design and modelling facilities for microsystems and integrated electronics.
  • Device and materials characterisation equipment including SEM, SIMS, TEM, x-ray, spectroscopic ellipsometry, AFM and reflectometry.
*
Back to top Back to top
*
* * *
*
*
*   *